• Part: IPB180P04P4L-02
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 459.53 KB
Download IPB180P04P4L-02 Datasheet PDF
Infineon
IPB180P04P4L-02
IPB180P04P4L-02 is manufactured by Infineon.
Final Data Sheet OptiMOS®-P2 Power-Transistor Product Summary VDS RDS(on),max ID -40 V 2.4 mW -180 A Features - P-channel - Logic Level - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested - Intended for reverse battery protection Type IPB180P04P4L-02 Package PG-TO263-7-3 Marking 4QP04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D= -90A Avalanche current,...