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IPB200N25N3 - Power-Transistor

This page provides the datasheet information for the IPB200N25N3, a member of the IPB200N25N3G Power-Transistor family.

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IPB200N25N3

Datasheet Details

Part number IPB200N25N3
Manufacturer Infineon
File Size 697.76 KB
Description Power-Transistor
Datasheet download datasheet IPB200N25N3 Datasheet
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Full PDF Text Transcription

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IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package Marking PG-TO263-3 200N25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E
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