Datasheet4U Logo Datasheet4U.com

IPB240N04S4-1R0 - Power-Transistor

Key Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • Ultra low Rds(on).
  • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 1.0 mW 240 A PG-TO263-7-3 Type IPB240N04S4-1R0 Package PG-TO263-7-3 Marking 4N041R0 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB200N15N3G Power-Transistor Infineon Technologies
IPB200N15N3G N-Channel MOSFET INCHANGE
IPB200N25N3G Power-Transistor Infineon Technologies
IPB200N25N3G N-Channel MOSFET INCHANGE
IPB22N03S4L-15 Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPB240N04S4-R9 Power-Transistor
IPB240N03S4L-R8 Power-Transistor
IPB240N03S4L-R9 Power-Transistor
IPB200N15N3 Power-Transistor
IPB200N25N3 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB240N04S4-1R0 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 1.