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IPB26CN10N - Power-Transistor

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB26CN10N
Manufacturer Infineon
File Size 1.01 MB
Description Power-Transistor
Datasheet download datasheet IPB26CN10N Datasheet
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IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 Marking 26CN10N 25CN10N 26CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,
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