Infineon Technologies IPB26CNE8NG
Power-Transistor
| Part No. | IPB26CNE8NG |
|---|---|
| Datasheet | IPB26CNE8NG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel, normal level● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● 175 °C operating temperature
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 25 35 V mΩ A
● Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package Marking PG-TO263-3 26CNE8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 35 25 140 65 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=35 A, R GS=25 Ω I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 71 -55 ...
