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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
200 V 32 mΩ 34 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
Package Marking
PG-TO263-3 320N20N
PG-TO220-3 320N20N
PG-TO262-3 320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode
IPB320N20N3 Datasheet
