IPB320N20N3G
IPB320N20N3G is Power-Transistor manufactured by Infineon.
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
200 V 32 mΩ 34 A
Type
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
Package Marking
PG-TO263-3 320N20N
PG-TO220-3 320N20N
PG-TO262-3 320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol...
