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IPB34CN10N - Power-Transistor

Download the IPB34CN10N datasheet PDF. This datasheet also covers the IPB34CN10NG variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB34CN10NG-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Infineon

Part Number Description
IPB34CN10NG Power-Transistor
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IPB320N20N3G Power-Transistor
IPB35CN10NG Power-Transistor
IPB35N10S3L-26 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Package Marking PG-TO263-3 34CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 35CN10N Value Unit Continuous drain current ID T C=25 °C