IPB407N30N - MOSFET

Datasheet Summary

Features

N-channel, normal level.
Fast Diode with reduced Qrr.
Optimized for hard commutation ruggedness.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB407N30N
Manufacturer	Infineon
File Size	1.08 MB
Description	MOSFET
Datasheet	IPB407N30N Datasheet
Additional preview pages of the IPB407N30N datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPB407N30N DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 40.

Published: Feb 27, 2016 |