Description
Sheet 3 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Reversediodepeakdv/dt Gate source voltage Diode hard mutation destructive current2) Operating and storage temperature ID ID,pulse EAS dv/dt VGS Ptot Tj,Tstg Min. 44 - 34 - 176 - 240 - 60 - 20 Unit Note/TestCondition A TC=25°C TC=100°C A TC=25°C mJ ID=22A,RGS=50Ω kV/µs ID=44A,VDS=150V, di/dt=1000A/µs,Tj,max=175°C V- - - 300 W TC=25°C -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case3) RthJC - ambient, RthJA - ambient, RthJA Min.
Key Features
- N-channel,normallevel
- FastDiodewithreducedQrr
- Optimizedforhardmutationruggedness
- Verylowon-resistanceRDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHScompliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
