IPB50R199CP
IPB50R199CP is Power Transistor manufactured by Infineon.
Features
- Lowest figure of merit RON x Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Pb-free lead plating; Ro HS pliant
- Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ
550 V 0.199 Ω
34 n C
PG-TO263
Cool MOS CP is designed for:
- Hard & soft switching SMPS topologies
- CCM PFC for ATX, Notebook adapter, PDP and LCD TV
- PWM for ATX, Notebook adapter, PDP and LCD TV
Type IPB50R199CP
Package PG-TO263
Marking 5R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive t
2),3) AR
Avalanche current, repetitive t
2),3) AR
MOSFET dv /dt ruggedness
I D,pulse E AS E AR I AR dv /dt
T C=100 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot
T C=25...
