IPB50R299CP
IPB50R299CP is Power Transistor manufactured by Infineon.
Features
- Lowest figure of merit RON x Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Pb-free lead plating; Ro HS pliant
- Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.299 23 V Ω n C
PG-TO263
Cool MOS CP is designed for:
- Hard- & Softswitching SMPS topologies
- CCM PFC for Notebook adapter, PDP and large LCD power supplies
- PWM for Notebook adapter, PDP and large LCD power supplies Type IPB50R299CP Package PG-TO263 Marking 5R299P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V Value 12 8 26 289 0.44 4.4 50 ±20 ±30 104 -55 ... 150 W °C A V/ns V m J Unit A
Rev. 2.1 page 1
2009-02-23
Free Datasheet http://../
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 26 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction
- case R th JC R th JA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area3) T sold reflow MSL 1 1.2 62 K/W
- 35
- Soldering temperature, wave- and reflowsoldering allowed
- -
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V...
