IPB60R040C7 Datasheet | Infineon

MOSFET 600VCool MOSªC7Power Transistor Cool MOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon Technologies. 600VCool MOS™C7seriesbinestheexperienceoftheleading SJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwith RDS(on)- Abelow1Ohm- mm². Features - Suitableforhardandsoftswitching(PFCandhighperformance LLC) - Increased MOSFETdv/dtruggednessto120V/ns - Increasedefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg - Bestinclass RDS(on)/package - Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22) Benefits - Increasedeconomiesofscalebyusein PFCand PWMtopologiesinthe application - Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency - Enablinghighersystemefficiencybylowerswitchinglosses - Increasedpowerdensitysolutionsduetosmallerpackages - Suitableforapplicationssuchasserver,teleandsolar - Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto low Eossand Qg Applications PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar. Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max 650 40 V mΩ Qg.typ ID,pulse ID,continuous @ Tj<150°C...