IPB60R060C7
IPB60R060C7 is MOSFET manufactured by Infineon.
Description
Cool MOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon Technologies.
600VCool MOS™C7seriesbinestheexperienceoftheleading SJ MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwith RDS(on)- Abelow1Ohm- mm².
Features
- Suitableforhardandsoftswitching(PFCandhighperformance LLC)
- Increased MOSFETdv/dtruggednessto120V/ns
- Increasedefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg
- Bestinclass RDS(on)/package
- Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22)
Benefits
- Increasedeconomiesofscalebyusein PFCand PWMtopologiesinthe application
- Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
- Enablinghighersystemefficiencybylowerswitchinglosses
- Increasedpowerdensitysolutionsduetosmallerpackages
- Suitableforapplicationssuchasserver,teleandsolar
- Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto low Eossand Qg
Applications
PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar.
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
D²PAK tab
2 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
60 mΩ
Qg.typ
68 n C
ID,pulse
ID,continuous @ Tj<150°C...
