IPB60R105CFD7
Features
- Ultra-fastbodydiode
- Lowgatecharge
- Best-in-classreverserecoverycharge(Qrr)
- Improved MOSFETreversediodedv/dtanddi F/dtruggedness
- Lowest FOMRDS(on)- Qgand RDS(on)- Eoss
- Best-in-class RDS(on)in SMDand THDpackages
Benefits
- Excellenthardmutationruggedness
- Highestreliabilityforresonanttopologies
- Highestefficiencywithoutstandingease-of-use/performancetradeoff
- Enablingincreasedpowerdensitysolutions
Potentialapplications
Suiteablefor Soft Switchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications- Server, Tele,EVCharging
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
105 mΩ
Qg,typ
42 n C
ID,pulse
Eoss @ 400V
µJ
Body diode di...
