IPB60R180C7
IPB60R180C7 is MOSFET manufactured by Infineon.
Features
- Suitableforhardandsoftswitching(PFCandhighperformance LLC)
- Increased MOSFETdv/dtruggednessto120V/ns
- Increasedefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg
- Bestinclass RDS(on)/package
- Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22)
Benefits
- Increasedeconomiesofscalebyusein PFCand PWMtopologiesinthe application
- Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
- Enablinghighersystemefficiencybylowerswitchinglosses
- Increasedpowerdensitysolutionsduetosmallerpackages
- Suitableforapplicationssuchasserver,teleandsolar
- Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto low Eossand Qg
Applications
PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar.
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
180 mΩ
Qg.typ
24 n C
ID,pulse
ID,continuous @ Tj<150°C 22
Eoss@400V
µJ
Body diode di/dt
A/µs
Type/Ordering Code IPB60R180C7
Package PG-TO 263
Marking 60C7180
D²PAK...
