IPB60R210CFD7 - 600V MOSFET

Datasheet Summary

Description

Features

Ultra-fast body diode.
Low gate charge.
Best-in-class reverse recovery charge (Qrr).
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness.
Lowest FOM RDS(on).
Qg and RDS(on).
Eoss.
Best-in-class RDS(on) in SMD and THD packages Benefits.
Excellent hard commutation ruggedness.
Highest reliability for resonant topologies.
Highest efficiency with outstanding ease-of-use / performance tradeoff.
Enabl.

Infineon

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Datasheet Details

Part number	IPB60R210CFD7
Manufacturer	Infineon
File Size	1.20 MB
Description	600V MOSFET
Datasheet	IPB60R210CFD7 Datasheet
Additional preview pages of the IPB60R210CFD7 datasheet.

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Full PDF Text Transcription

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IPB60R210CFD7 MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.

Published: May 20, 2025 |