IPB60R380P6 - 600V MOSFET

Datasheet Summary

Description

Features

Increased MOSFET dv/dt ruggedness.
Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound Potential.

Infineon

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Datasheet Details

Part number	IPB60R380P6
Manufacturer	Infineon
File Size	2.48 MB
Description	600V MOSFET
Datasheet	IPB60R380P6 Datasheet
Additional preview pages of the IPB60R380P6 datasheet.

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Full PDF Text Transcription

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IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 MOSFET 600VCoolMOSªP6PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.

Published: Feb 23, 2016 |