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OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
Product Summary VDS RDS(on),max ID
IPB64N25S3-20
250 V 20 m 64 A PG‐TO263‐3‐2
Type IPB64N25S3-20
Package PG-TO263-3-2
Marking 3PN2520
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol
Conditions
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25°C I D=27A
Avalanche current, single pulse
I AS -
Reverse diode dv /dt
dv /dt
Gate source voltage Power dissipation Operating and storage temperature
V GS
-
P tot T C=25°C
T j, T stg -
IEC climatic catego
IPB64N25S3-20 Datasheet
