IPB65R090CFD7
Features
- Ultra-fastbodydiode
- 650Vbreakdownvoltage
- Best-in-class RDS(on)
- Reducedswitchinglosses
- Low RDS(on)dependencyovertemperature
Benefits
- Excellenthardmutationruggedness
- Extrasafetymarginfordesignswithincreasedbusvoltage
- Enablingincreasedpowerdensitysolutions
- Outstandinglightloadefficiencyinindustrial SMPSapplications
- Improvedfullloadefficiencyinindustrial SMPSapplications
- Pricepetitivenessoverprevious Cool MOS™families
Potentialapplications
Suitablefor Soft Switchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications- Server, Tele,EVCharging,Solar
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
90 mΩ
Qg,typ
53 n C
ID,pulse
Eoss @...
