Infineon Technologies IPB80N04S3-03
Power-Transistor
| Part No. | IPB80N04S3-03 |
|---|---|
| Datasheet | IPB80N04S3-03 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel - Enhancement mode● Automotive AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green package (RoHS compliant)
● Ultra low Rds(on)
● 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0403 3N0403 3N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 526 ±20 188 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Parameter Symbol Conditions min.
