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IPB80N07S4-05 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Product Summary VDS RDS(on),max (SMD version) ID 75 V 5.2 mW 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N07S4-05 IPI80N07S4-05 IPP80N07S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0705 4N0705 4N0705 Maximum.

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Datasheet Details

Part number IPB80N07S4-05
Manufacturer Infineon
File Size 412.21 KB
Description Power-Transistor
Datasheet download datasheet IPB80N07S4-05 Datasheet
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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Product Summary VDS RDS(on),max (SMD version) ID 75 V 5.
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