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IPB80P03P4L-04 - Power-Transistor

Datasheet Summary

Features

  • P-channel - Logic Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested.
  • Intended for reverse battery protection IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Product Summary VDS RDS(on) (SMD Version) ID -30 V 4.1 mW -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P03P4L-04 IPI80P03P4L-04 IPP80P03P4L-04 Package PG-TO263-3-2 PG-TO262-3-1.

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Datasheet Details

Part number IPB80P03P4L-04
Manufacturer Infineon
File Size 693.52 KB
Description Power-Transistor
Datasheet download datasheet IPB80P03P4L-04 Datasheet
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OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested • Intended for reverse battery protection IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Product Summary VDS RDS(on) (SMD Version) ID -30 V 4.
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