N-channel enhancement mode
For dynamic characterization refer to the datasheet of IPD031N03LG
AQL 0.65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883C
Die bond: soldered or glued
Full PDF Text Transcription for IPC055N03L3 (Reference)
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IPC055N03L3. For precise diagrams, and layout, please refer to the original PDF.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC055N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiM...
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p IPC055N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC055N03L3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPD031N03LG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 30 3.11) 3.28 x 1.
IPC055N03L3 Datasheet
