IPC100N04S5-2R8
IPC100N04S5-2R8 is Power-Transistor manufactured by Infineon.
Features
- Opti MOS™
- power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 2.8 m W 100 A
PG-TDSON-8-33
- N-channel
- Enhancement mode
- Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Type IPC100N04S5-2R8
Package
Marking
PG-TDSON-8-33 5N042R8
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse4) Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=50A
I AS
- V GS
- P tot T C=25°C
T j, T stg
- Value
400 66 100 ±20 75 -55 ... +175
Unit A m J A V W °C
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