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IPC171N04N - MOSFET

General Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB021N04N G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glue

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC171N04N DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC171N04N 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB021N04NG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 40 2.11) 5.9 x 2.