IPC171N04N - MOSFET

Datasheet Summary

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB021N04N G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glue

Infineon

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Datasheet Details

Part number	IPC171N04N
Manufacturer	Infineon
File Size	1.47 MB
Description	MOSFET
Datasheet	IPC171N04N Datasheet
Additional preview pages of the IPC171N04N datasheet.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC171N04N DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC171N04N 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB021N04NG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 40 2.11) 5.9 x 2.

Published: Feb 15, 2016 |