IPC218N04N3 Overview
product) 2)typicalbaredieRDS(on);VGS=10Vwhenusedwith4 500µmAl-wedgedouble-stitchbonding 3) limited by wafer test-equipment 4) Wafer tested. Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With...