IPC218N06N3 - MOSFET

Datasheet Summary

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB017N06N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glu

Infineon

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Datasheet Details

Part number	IPC218N06N3
Manufacturer	Infineon
File Size	534.90 KB
Description	MOSFET
Datasheet	IPC218N06N3 Datasheet
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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC218N06N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC218N06N3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB017N06N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 60 1.71) 5.9 x 3.

Published: Feb 15, 2016 |