Datasheet Details
| Part number | IPC302N12N3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 533.19 KB |
| Description | MOSFET |
| Datasheet | IPC302N12N3-Infineon.pdf |
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|
Overview: MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC302N12N3 DataSheet Rev.2.
| Part number | IPC302N12N3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 533.19 KB |
| Description | MOSFET |
| Datasheet | IPC302N12N3-Infineon.pdf |
|
|
|
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB038N12N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 120 3.81) 6.7 x 4.5 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC302N12N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min.
120 2 - Values Typ.
Max.
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