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IPD029N04NF2S - MOSFET

General Description

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Key Features

  • Optimized for wide range of.

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IPD029N04NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.9 mΩ ID 131 A Qoss 49 nC QG(0V..10V) 45 nC D-PAK tab 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD029N04NF2S Package PG-TO252-3 Marking 029N04NS RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .