IPD033N06N
IPD033N06N is MOSFET manufactured by Infineon.
Features
- Optimizedforsynchronousrectification
- 100%avalanchetested
- Superiorthermalresistance
- N-channel,normallevel
- Qualifiedaccordingto JEDEC1)fortargetapplications
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
3.3 mΩ
QOSS
44 n C
QG(0V..10V)
38 n C
D-PAK tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPD033N06N
Package PG-TO252-3
Marking 033N06N
Related Links
- 1) J-STD20 and JESD22
Final Data Sheet
Rev.2.0,2016-09-12
Opti MOSTMPower-Transistor,60V
Tableof Contents
Description
- -
-...
