• Part: IPD036N04LG
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 153.35 KB
Download IPD036N04LG Datasheet PDF
Infineon
IPD036N04LG
IPD036N04LG is Power-Transistor manufactured by Infineon.
- Part of the IPD036N04L comparator family.
Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC1) for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 100% Avalanche tested - Pb-free plating; Ro HS pliant Type IPD036N04L G - Pb-free plating; Ro HS pliant Product Summary V DS R DS(on),max ID IPD036N04L G 40 V 3.6 mΩ 90 A Package Marking PG-TO252-3 036N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=90 A, R GS=25 Ω Value Unit 55 m J ±20 Rev. 1.0 page 1 2007-12-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol...