Infineon Technologies IPD03N03LB
Power-Transistor
| Part No. | IPD03N03LB |
|---|---|
| Datasheet | IPD03N03LB Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Ideal for high-frequency dc/dc converters● Qualified according to JEDEC for target applications
● N-channel, logic level
● Excellent gate charge x R DS(on) product (FOM)
● Superior thermal resistance
● 175 °C operating temperature
● Pb-free lead plating; RoHS compliant 1) Product Summary V DS R DS(on),max ID 30 3.3 90 V mΩ A PG-TO252-3-11 Type IPD03N03LB G Package P-TO252-3-11 Ordering Code Q67042-S4260 Marking 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=90 A, R GS=25 Ω I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 90 90 360 240 6 ±20 115 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.11 page 1 2004-12-16 IPD03N03LB G Parameter Symbol Conditions min.
