Infineon Technologies IPD042P03L3G
Power-Transistor
| Part No. | IPD042P03L3G |
|---|---|
| Datasheet | IPD042P03L3G Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● single P-Channel (Logic Level)● Enhancement mode
● Qualified according JEDEC1) for target applications
● 175 °C operating temperature
● Pb-free; RoHS compliant
● applications: load switch, HS-switch
● Halogen-free according to IEC61249-2-21 IPD042P03L3 G Product Summary VDS RDS(on),max ID VGS = 10V VGS = 4.5V -30 V 4.2 mW 6.8 -70 A D PG-TO252-3 G S Type IPD042P03L3 G Package Marking PG-TO252-3 042P03L Lead free Yes Packing non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature I D T C=25 °C T C=100 °C I D,pulse T C=25 °C2) E AS I D=-70 A, R GS=25 W V GS P tot T C =25 °C T j, T stg ESD class JESD22-A114 HBM Soldering temperature IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Value Unit -70 A -70 -280 269 mJ ±20 V 150 W -55 ... 175 °C class 2 ( 2 kV - < 4 kV) 260 °C 55/175/56 Rev.
