IPD04N03LA Description
Type OptiMOS®2 Power-Transistor Package Marking Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior 175 °C operating temperature Pb-free lead plating; DIN IEC 68-1 Value 50 50 350 600 6 ±20 115 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev.