IPD050N10N5
IPD050N10N5 is MOSFET manufactured by Infineon.
Features
- N-channel,normallevel
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
5.0 mΩ
QOSS
67 n C
QG(0V..10V)
51 n C
D-PAK tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPD050N10N5
Package P-TO252-3
Marking 050N10N5
Related Links
- 1) J-STD20 and JESD22
Final Data Sheet
Rev.2.1,2017-01-17
Opti MOSTM5Power-Transistor,100V
Tableof Contents
Description
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