• Part: IPD06N03LZG
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 501.23 KB
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Datasheet Summary

OptiMOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC1) for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Superior thermal resistance - 175 °C operating temperature - Pb-free lead plating; RoHS pliant IPD06N03LZ G IPS06N03LZ G IPU06N03LZ G Product Summary V DS R DS(on),max (SMD Version) ID 25 V 5.0 mΩ 50 A Type IPD06N03LZ IPS06N03LZ IPU06N03LZ Package Marking P-TO252-3-11 06N03LZ P-TO251-3-11 06N03LZ P-TO251-3-21 06N03LZ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed...