IPD09N03LAG Description
OptiMOS®2 Power-Transistor.
IPD09N03LAG Key Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target application
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- case SMD version, device on PCB
- 2.4 K/W
- V 1.6 2 0.1 1 µA