• Part: IPD100N06S4-03
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 160.02 KB
Download IPD100N06S4-03 Datasheet PDF
Infineon
IPD100N06S4-03
IPD100N06S4-03 is manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested - Ultra Low RDSon - Ultra High ID Product Summary V DS R DS(on),max ID 60 V 3.5 mΩ 100 A PG-TO252-3-11 Type IPD100N06S4-03 Package Marking PG-TO252-3-11 4N0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate...