IPD100N06S4-03
IPD100N06S4-03 is manufactured by Infineon.
OptiMOS®-T2 Power-Transistor
Features
- N-channel
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
- Ultra Low RDSon
- Ultra High ID
Product Summary V DS R DS(on),max ID
60 V 3.5 mΩ 100 A
PG-TO252-3-11
Type IPD100N06S4-03
Package
Marking
PG-TO252-3-11 4N0603
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=50A
Avalanche current, single pulse I AS
- Gate...