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IPD12CN10NG - Power-Transistor

This page provides the datasheet information for the IPD12CN10NG, a member of the IPD12CN10N Power-Transistor family.

Product Overview

Infineon

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IPD12CN10NG Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPD12CN10NG

Datasheet Details

Part number	IPD12CN10NG
Manufacturer	Infineon
File Size	858.83 KB
Description	Power-Transistor
Datasheet	IPD12CN10NG Datasheet
Additional preview pages of the IPD12CN10NG datasheet.

IPD12CN10NG Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Sep 30, 2020 |