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IPD180N10N3 Datasheet Power-Transistor

Manufacturer: Infineon

Download the IPD180N10N3 datasheet PDF. This datasheet also includes the IPD180N10N3G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IPD180N10N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

Overview

IPD180N10N3 G OptiMOSTM3 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max TO-263 ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

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INCHANGE Logo IPD180N10N3 N-Channel MOSFET INCHANGE

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