IPD30N06S3-24
IPD30N06S3-24 is Power-Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A
Features
- N-channel
- Normal Level
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- 100% Avalanche tested PG-TO252-3-11
Type IPD30N06S3-24
Package PG-TO252-3-11
Marking 3N0624
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage...