• Part: IPD30N06S3-24
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 180.79 KB
Download IPD30N06S3-24 Datasheet PDF
Infineon
IPD30N06S3-24
IPD30N06S3-24 is Power-Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A Features - N-channel - Normal Level - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (RoHS pliant) - 100% Avalanche tested PG-TO252-3-11 Type IPD30N06S3-24 Package PG-TO252-3-11 Marking 3N0624 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage...