IPD320N20N3 Description
IPD320N20N3 G OptiMOSTM3 Power-Transistor.
IPD320N20N3 Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Gate threshold voltage
- R DS(on) V GS=10 V, I D=34 A
- t d(on)