IPD320N20N3
IPD320N20N3 is Power-Transistor manufactured by Infineon.
- Part of the IPD320N20N3G comparator family.
- Part of the IPD320N20N3G comparator family.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPD320N20N3 G
200 V 32 m W 34 A
Package Marking
PG-TO252-3 320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=34 A, R GS=25 W
Reverse diode dv /dt dv /dt
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
34 24 136 190 10 ±20 136 -55 ... 175 55/175/56
Unit A m J k V/µs V W °C
Rev. 2.3 page 1
2015-03-30
IPD320N20N3 G
Parameter
Symbol Conditions
Thermal characteristics...
