IPD320N20N3G Description
IPD320N20N3 G OptiMOSTM3 Power-Transistor.
IPD320N20N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G
- case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 1.1 75 50 K/W
- 1770 135 4 11 9 21 4