IPD33CN10NG Overview
IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor.
IPD33CN10NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- IPD33CN10N G IPU33CN10N G
- 10 1 25
