IPD33CN10NG
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO252) ID 100 34 27 V mΩ A
- Ideal for high-frequency switching and synchronous rectification Type IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G
Package Marking
PG-TO263-3 35CN10N
PG-TO252-3 33CN10N
PG-TO262-3 35CN10N
PG-TO220-3 35CN10N
PG-TO251-3 33CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1)
Value 27 20 108 47 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C I D=27 A, R GS=25 Ω I D=27...
