IPD50R1K4CE - MOSFET

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for standard grade.

Infineon

Datasheet Details

Part number	IPD50R1K4CE
Manufacturer	Infineon
File Size	1.29 MB
Description	MOSFET
Datasheet	IPD50R1K4CE Datasheet
Additional preview pages of the IPD50R1K4CE datasheet.

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Full PDF Text Transcription

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IPD50R1K4CE,IPU50R1K4CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Published: Apr 14, 2015 |