IPD50R500CE - MOSFET

Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for standard grade appli.

Infineon

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Datasheet Details

Part number	IPD50R500CE
Manufacturer	Infineon
File Size	1.09 MB
Description	MOSFET
Datasheet	IPD50R500CE Datasheet
Additional preview pages of the IPD50R500CE datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 500VCoolMOS™CEPowerTransistor IPD50R500CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R500CE 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Published: Apr 14, 2015 |