• Part: IPD5N25S3-430
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 179.57 KB
Download IPD5N25S3-430 Datasheet PDF
IPD5N25S3-430 page 2
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Datasheet Summary

OptiMOS™-T Power-Transistor Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 250 V 430 mW 5A PG-TO252-3-313 Type IPD5N25S3-430 Package PG-TO252-3- Marking 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation I D,pulse E AS I AS dv /dt V GS P tot T C=25°C, V GS=10V T C=100°C, V GS=10V1) T...