IPD60R380P6
Description
inal Data Sheet 2 Rev.2.4,2020-06-09 600VCoolMOSªP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche curr.
Key Features
- IncreasedMOSFETdv/dtruggedness
- ExtremelylowlossesduetoverylowFOMRdson
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
