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IPD60R380P6 - 600V MOSFET

General Description

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Key Features

  • Increased MOSFET dv/dt ruggedness.
  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • Pb-free plating, Halogen free mold compound Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 MOSFET 600VCoolMOSªP6PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.