IPD60R600CM8
IPD60R600CM8 is MOSFET manufactured by Infineon.
MOSFET
600VCool MOSªCM8Power Transistor
The Cool MOS™8thgenerationplatformisarevolutionarytechnologyfor highvoltagepower MOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredby Infineon Technologies.The600V Cool MOS™CM8seriesisthesuccessortothe Cool MOS™7. Itbinesthebenefitsofafastswitching SJMOSFETwithexcellent easeofuse,e.glowringingtendency,implementedfastbodydiode(CFD) forallproductswithoutstandingrobustnessagainsthardmutationand excellent ESDcapability.Furthermore,extremelylowswitchingand conductionlossesof CM8,makeswitchingapplicationsevenmore efficient.
Features
- Suitableforhardandsoftswitchingtopologiesthankstoan outstandingmutationruggedness
- Significantreductionofswitchingandconductionlosses
- Bestinclass RDS(on)perpackageproductsenabledbyultralow RDS(on)- A
Benefits
- Easeofuseandfastdesign-inthroughlowringingtendencyandusage across PFCand PWMstages
- Simplifiedthermalmanagementthankstoouradvanceddieattach technique
- Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualityduestateoftheart ESDprotection
- Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
- Powersuppliesandconverters
- PFCstages&LLCresonantconverters
- Highefficiencyswitchingapplications
- e.g.Server,Tele,EVCharging,UPS
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
DPAK tab
2 1
Drain Pin 2, Tab
Gate Pin 1
- 1
- 2
- 1: Internal body diode
- 2: Integrated ESD diode
Source Pin 3
Table1Key Performance...
