IPD65R650CE
Description
Sheet 2 Rev.2.4,2016-12-07 650VCoolMOSªCEPowerTransistor IPD65R650CE,IPA65R650CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation (Non FullPAK) TO-252 Storage temperature Operating junction temperature C.
Key Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- Qualifiedforstandardgradeapplications
